φetch is a tool for feature scale plasma etching simulation. It links the fluxes of neutral and charged species in the bulk plasma with the profile evolution of etched features. In this version (v. 0.9) of φetch the user can define the surface
chemistry, the interaction of each species with each material of the etched structure. The etched features can be long trenches or axisymmetric holes.
Figure 1. Plasma etching of long trenches and axiymmetric holes.
A simple graphical user interface (GUI) has been developed based on a 6-step wizard where the user defines the geometry to be etched, the species in the gas phase, the surface chemistry, numerical and other parameters of the simulation. In Fig. 2 the second step of the wizard, where the user defines the dimensions of the structure to be etched, is shown.
Figure 2. The second the second step of the wizard of φetch
φetch implements a computational framework for the topography evolution of features during plasma etching. The input of the framework is the species fluxes coming from the bulk plasma and the output is the profile evolution of the etched features. It results from the coupling (see Fig. 3) of three modules: A) A local flux calculation module, which calculates the local fluxes inside the etched features (e.g., trenches, holes), B) a surface chemistry module which describes the etching mechanisms on the surface, and C) a profile evolution algorithm which is based on the level set method. The inputs of this framework are the species fluxes at the bulk plasma and the output is the topography of the etched feature. More information about the framework is included in Refs. [1-2]
Figure 3. The modules of the computational framework implemented by φetch.
φetch is available for public download and is installed in a few simple steps. It includes a short manual. The current version is 0.9.
Download φetch v.0.9
Please check this site periodically to see if upgrades are available or if errors have been reported.
For further information as well as suggestions concerning applications, performance, and options of φetch , please send us your comment.
Permission to use φetch is hereby granted, provided that proper reference is made in any publications making use of the data generated by this software. The author makes no warranty about the suitability of the software for any purpose. Downloading φetch from this site is implicit acceptance of these conditions.
φetch was developed by George Kokkoris. Most of the algorithms and numerical methods of φetch were developed during his PhD
thesis, supported by the Institute of Microelectronics of NCSR "Demokritos", with advisors Evangelos Gogolides and Andreas Boudouvis.
The graphical user interface of the current version (v.0.9) was developed by Kimon Kontosis.
1. G. Kokkoris, A. Tserepi, A. G. Boudouvis, and E. Gogolides, "Simulation of SiO2 and Si feature etching for microelectronics and microelectromechanical systems fabrication: A combined simulator coupling modules of surface etching, local flux calculation, and profile evolution", Journal of Vacuum Science & Technology A 22, 1896-1902 (2004)
2. G. Kokkoris, A. G. Boudouvis, and E. Gogolides, "Integrated framework for the flux calculation of neutral species inside trenches and holes during plasma etching", Journal of Vacuum Science & Technology A 24, 2008 (2006)
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Last updated: September 28, 2008